Semiconductor optical element, semiconductor optical element forming structure, and method for manufacturing semiconductor optical element using the same

ABSTRACT

A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.

TECHNICAL FIELD

The present invention relates to a semiconductor optical element, asemiconductor optical element forming structure, and a method ofmanufacturing a semiconductor optical element using the same.

BACKGROUND

As a semiconductor optical element, for example, a laser diode describedin the following patent document 1 is conventionally known. In thefollowing patent document 1, it is suggested to prevent carbon fromdiffusing into an adjacent layer due to heat and to lower a thresholdcurrent density to prolong the life of a laser diode by using carbon asa p-type dopant of a p-type compound semiconductor clad layer in thelaser diode having an active layer between a n-type compoundsemiconductor clad layer and the p-type compound semiconductor cladlayer.

However, the laser diode described in the above-mentioned patentdocument 1 has had the following issues.

That is, in the laser diode described in the above-mentioned patentdocument 1, there were some cases where the crystallinity of the p-typecompound semiconductor clad layer (hereinafter, sometimes referred to asa “p-type clad layer”) is lowered. Therefore, the laser diode describedin the above-mentioned patent document 1 has had room for improvement interms of light emission characteristics.

PATENT LITERATURE

Patent Document 1: JPH11-4044 A

SUMMARY

One or more embodiments of the present invention provide a semiconductoroptical element capable of improving light emission characteristics, asemiconductor optical element forming structure, and a method ofmanufacturing a semiconductor optical element using the same.

The reason why the laser diode described in the above-mentioned patentdocument 1 has room for improvement in terms of light emissioncharacteristics is considered as follows:

First, in a case of manufacturing a GaAs-based semiconductor laser by anorganic metal vapor phase growth method (MOCVD method), a halomethaneraw material such as CBr₄ (carbon bromide) or CCl₄ (chlorine bromide) isused as a carbon raw material for carbon doping. These halomethanes havean etching action on GaAs-based crystals. For this reason, it is knownthat a defect is introduced during crystal growth, and growth of asemiconductor layer having good crystallinity becomes difficult (see P.D. Casa et al. Journal of Crystal Growth, Vol. 434, 116). It isconsidered that the influence of the etching action on the lowering ofcrystallinity of the p-type clad layer becomes remarkable since thehigher the concentration of the carbon dopant in the stackedsemiconductor layer becomes, the greater the amount of the halomethaneraw material used becomes. For example, in a case where a p-type cladlayer having a thickness of more than 2 μm is laminated on an activelayer, it is considered that it is difficult to grow a highlycrystalline semiconductor layer. As a result, the p-type clad layer isconsidered to bring a large adverse effect on light emissioncharacteristics, such as lowering of light emission efficiency anddeterioration of long-term reliability. Accordingly, the inventors haveconducted intensive studies repeatedly to deal with the above-mentionedissues. As a result, the inventors have noticed that there is acorrelation between the fact that the crystallinity of the p-type cladlayer is lowered and the occurrence of roughness on the surface of thelaser diode. Furthermore, the inventors have noticed that, in a casewhere the thickness of a p-type clad layer where carbon is doped into acompound semiconductor as a dopant is small, roughness is hardlygenerated on the surface of the laser diode, and in a case where thethickness of the p-type clad layer is increased, roughness is likely tooccur on the surface of the laser diode. Furthermore, the inventors havefound that the above-mentioned issues can be dealt with by constituting,for example, a p-type clad layer to have a carbon-doped p-typesemiconductor layer doped with carbon and a group 2 element-doped p-typesemiconductor layer doped with a group 2 element, and suppressing thethickness of the carbon-doped p-type semiconductor layer whilemaintaining the required thickness of the p-type clad layer andarranging the carbon-doped p-type semiconductor layer at a positioncloser to the active layer than that of the group 2 element-doped p-typesemiconductor layer.

That is, the present invention is a semiconductor optical elementcomprising a first conductivity type semiconductor substrate and alaminated body provided on the first conductivity type semiconductorsubstrate, the laminated body including a first conductivity typesemiconductor layer, an active layer, a second conductivity typesemiconductor layer, and a second conductivity type contact layerlaminated sequentially from a side of the first conductivity typesemiconductor substrate, in which the second conductivity typesemiconductor layer includes a carbon-doped second conductivity typesemiconductor layer where carbon is doped as a dopant in a compoundsemiconductor and a group 2 element doped second conductivity typesemiconductor layer where a group 2 element is doped as a dopant in acompound semiconductor, and in which the carbon-doped secondconductivity type semiconductor layer is disposed at a position closerto the active layer than the group 2 element-doped second conductivitytype semiconductor layer.

In this semiconductor optical element, the second conductivity typesemiconductor layer includes a carbon-doped second conductivity typesemiconductor layer where carbon is doped as a dopant in a compoundsemiconductor, and a group 2 element-doped second conductivity typesemiconductor layer where a group 2 element is doped as a dopant in acompound semiconductor, and the carbon-doped second conductivity typesemiconductor layer is arranged at a position closer to the active layerthan the group 2 element-doped second conductivity type semiconductorlayer. For this reason, according to the semiconductor optical elementof the present invention, as compared with a case where the secondconductivity type semiconductor layer is composed of only thecarbon-doped second conductivity type semiconductor layer, the thicknessof the carbon-doped second conductivity type semiconductor layer can bereduced while maintaining the required thickness of the secondconductivity type semiconductor layer, and crystallinity of the secondconductivity type semiconductor layer can be improved. Therefore, thesemiconductor optical element of the present invention can improve lightemission characteristics.

In the above-mentioned semiconductor optical element, the secondconductivity type contact layer may be composed of a carbon-doped secondconductivity type contact layer where carbon is doped as a dopant in acompound semiconductor.

In this case, the dopant is carbon in the carbon-doped secondconductivity type contact layer, and the carbon has a diffusioncoefficient smaller than that of the group 2 element. Therefore, even ifthe dopant concentration is increased in the carbon-doped secondconductivity type contact layer, diffusion of the dopant into the activelayer can be sufficiently suppressed. Accordingly, the carbon can bedoped with a higher concentration than the group 2 element, and theresistance of the carbon-doped second conductivity type contact layercan be lowered.

In the above-mentioned semiconductor optical element, a concentration ofthe dopant in the second conductivity type contact layer may be higherthan a concentration of the dopant in the carbon-doped secondconductivity type semiconductor layer.

In this case, the dopant concentration in the carbon-doped secondconductivity type semiconductor layer is lower than the concentration ofthe dopant in the second conductivity type contact layer, and the dopantis carbon. Therefore, compared with the case where the dopantconcentration in the second conductivity type contact layer is equal toor less than the dopant concentration in the carbon-doped secondconductivity type semiconductor layer, the crystallinity can be furtherimproved in the carbon-doped second conductivity type semiconductorlayer bringing a larger effect on the light emission characteristic thanthe second conductivity type contact layer bringing less influence onthe light emission characteristic. Further, the resistance of the secondconductivity type contact layer can be further lowered. Accordingly, thelight emission characteristics of the semiconductor optical element canbe further improved.

In the above-mentioned semiconductor optical element, a ratio of thethickness of the group 2 element-doped second conductivity typesemiconductor layer in the thickness of the second conductivity typesemiconductor layer may be more than 50% and less than 100%.

This semiconductor element can further improve the crystallinity of thesecond conductivity type semiconductor layer in comparison with the casewhere the ratio of the thickness of the group 2 element-doped secondconductivity type semiconductor layer in the thickness of the secondconductivity type semiconductor layer is 50% or less. Therefore, thesemiconductor optical element of the present invention can furtherimprove light emission characteristics.

In the above-mentioned semiconductor optical element, the maximumconcentration of the dopant in the group 2 element-doped secondconductivity type semiconductor layer may be larger than the maximumconcentration of the dopant in the carbon-doped second conductivity typesemiconductor layer.

This semiconductor optical element can lower the resistance of thesecond conductivity type semiconductor layer while further improving thecrystallinity of the second conductivity type semiconductor layer, ascompared with the case where the maximum concentration of the dopant inthe group 2 element-doped second conductivity type semiconductor layeris equal to or less than the maximum concentration of the dopant in thecarbon-doped second conductivity type semiconductor layer. Therefore,the semiconductor optical element of the present invention can furtherimprove light emission characteristics.

In the above-mentioned semiconductor optical element, the group 2element-doped second conductivity type semiconductor layer may include agraded layer where a concentration of the dopant increases as a distancefrom the active layer increases.

In this case, the diffusion of the dopant into the active layer in theuse of the semiconductor optical element can be suppressed while theresistance value of the group 2 element-doped second conductivity typesemiconductor layer is lowered, and the light emission characteristicscan be further improved.

Moreover, the present invention is a semiconductor optical elementforming structure, comprising a first conductivity type semiconductorwafer and a laminated body provided on the first conductivity typesemiconductor wafer, the laminated body including a first conductivitytype semiconductor layer, an active layer, a second conductivity typesemiconductor layer, and a second conductivity type contact layerlaminated sequentially from a side of the first conductivity typesemiconductor wafer, in which the second conductivity type semiconductorlayer includes a carbon-doped second conductivity type semiconductorlayer where carbon is doped as a dopant in a compound semiconductor, anda group 2 element-doped second conductivity type semiconductor layerwhere a group 2 element is doped as a dopant in a compoundsemiconductor, and in which the carbon-doped second conductivity typesemiconductor layer is disposed at a position closer to the active layerthan the group 2 element-doped second conductivity type semiconductorlayer.

In the above-mentioned semiconductor optical element forming structure,the second conductivity type semiconductor layer includes a carbon-dopedsecond conductivity type semiconductor layer where carbon is doped as adopant in a compound semiconductor, and a group 2 element-doped secondconductivity type semiconductor layer where a group 2 element is dopedas a dopant in a compound semiconductor, and the carbon-doped secondconductivity type semiconductor layer is arranged at a position closerto the active layer than the group 2 element-doped second conductivitytype semiconductor layer. Therefore, according to the semiconductoroptical element forming structure of the present invention, as comparedwith the case where the second conductivity type semiconductor layer iscomposed of only the carbon-doped second conductivity type semiconductorlayer, the thickness of the carbon-doped second conductivity typesemiconductor layer can be reduced while maintaining the requiredthickness of the second conductivity type semiconductor layer, andcrystallinity of the second conductivity type semiconductor layer can beimproved. Therefore, according to the semiconductor optical elementforming structure of the present invention, a semiconductor opticalelement capable of improving light emission characteristics can beformed.

In the above-mentioned semiconductor optical element forming structure,the second conductivity type contact layer may be composed of acarbon-doped second conductivity type contact layer where carbon isdoped as a dopant in a compound semiconductor.

In this case, the carbon has a diffusion coefficient smaller than thatof the group 2 element. Therefore, even if the dopant concentration isincreased in the carbon-doped second conductivity type contact layer,diffusion of the dopant into the active layer can be sufficientlysuppressed. Accordingly, the carbon can be doped with a higherconcentration than the group 2 element, and the resistance of thecarbon-doped second conductivity type contact layer can be lowered.

In the above-mentioned semiconductor optical element forming structure,a concentration of the dopant in the second conductivity type contactlayer may be higher than a concentration of the dopant in thecarbon-doped second conductivity type semiconductor layer.

In this case, the concentration of the dopant in the carbon-doped secondconductivity type semiconductor layer is lower than the concentration ofthe dopant in the second conductivity type contact layer, and the dopantis carbon. Therefore, compared with the case where the concentration ofthe dopant in the second conductivity type contact layer is less than orequal to the concentration of the dopant in the carbon-doped secondconductivity type semiconductor layer, the crystallinity can be furtherimproved in the carbon-doped second conductivity type semiconductorlayer bringing a larger effect on the light emission characteristicsthan the second conductivity type contact layer bringing less influenceon the light emission characteristics. Further, the resistance of thesecond conductivity type contact layer can be further lowered.Accordingly, a semiconductor optical element capable of furtherimproving light emission characteristics can be formed.

In the above-mentioned semiconductor optical element forming structure,a ratio of the thickness of the group 2 element-doped secondconductivity type semiconductor layer in the thickness of the secondconductivity type semiconductor layer may be more than 50% and less than100%.

The semiconductor optical element forming structure can further improvethe crystallinity of the second conductivity type semiconductor layer incomparison with the case where the ratio of the thickness of the group 2element-doped second conductivity type semiconductor layer in thethickness of the second conductivity type semiconductor layer is 50% orless. Therefore, according to the semiconductor optical element formingstructure, a semiconductor optical element capable of further improvinglight emission characteristics can be manufactured.

In the above-mentioned semiconductor optical element forming structure,the maximum concentration of the dopant in the group 2 element-dopedsecond conductivity type semiconductor layer may be larger than themaximum concentration of the dopant in the carbon-doped secondconductivity type semiconductor layer.

According to the semiconductor optical element forming structure, ascompared with the case where the maximum concentration of the dopant inthe group 2 element-doped second conductivity type semiconductor layeris equal to or less than the maximum concentration of the dopant in thecarbon-doped second conductivity type semiconductor layer, theresistance of the second conductivity type semiconductor layer can belowered while further improving the crystallinity of the secondconductivity type semiconductor layer. Accordingly, the semiconductoroptical element forming structure of the present invention canmanufacture a semiconductor optical element capable of further improvinglight emission characteristics.

In the above-mentioned semiconductor optical element forming structure,the group 2 element-doped second conductivity type semiconductor layermay include a graded layer where a concentration of the dopant increasesas a distance from the active layer increases.

In this case, it is possible to manufacture a semiconductor opticalelement capable of suppressing the diffusion of the dopant into theactive layer at the time of use while lowering the resistance value ofthe group 2 element-doped second conductivity type semiconductor layer,and further improving light emission characteristics.

The present invention is also a method of manufacturing theabove-described semiconductor optical element, including a structurepreparation step of preparing the above-described semiconductor opticalelement forming structure, and a semiconductor optical element formationstep of forming the semiconductor optical element from the semiconductoroptical element forming structure, in which the structure preparationstep includes: a second conductivity type semiconductor layer formationstep of forming the second conductivity type semiconductor layer on theactive layer; and a second conductivity type contact layer formationstep of forming the second conductivity type contact layer on the secondconductivity type semiconductor layer, and in which the secondconductivity type semiconductor layer formation step includes acarbon-doped second conductivity type semiconductor layer formation stepof forming the carbon-doped second conductivity type semiconductor layeron the active layer; and a group 2 element-doped second conductivitytype semiconductor layer formation step of forming the secondconductivity type semiconductor layer by forming the group 2element-doped second conductivity type semiconductor layer on thecarbon-doped second conductivity type semiconductor layer.

According to this manufacturing method, in the obtained semiconductoroptical element, the second conductivity type semiconductor layer has acarbon-doped second conductivity type semiconductor layer where carbonis doped as a dopant in a compound semiconductor, and a group 2element-doped second conductivity type semiconductor layer where a group2 element is doped as a dopant in a compound semiconductor, and thecarbon-doped second conductivity type semiconductor layer is arranged ata position closer to the active layer than the group 2 element-dopedsecond conductivity type semiconductor layer. Therefore, in the obtainedsemiconductor optical element, as compared with the case where thesecond conductivity type semiconductor layer is composed of only thecarbon-doped second conductivity type semiconductor layer, the thicknessof the carbon-doped second conductivity type semiconductor layer can bereduced while maintaining the required thickness of the secondconductivity type semiconductor layer, and crystallinity of the secondconductivity type semiconductor layer can be improved. Therefore, asemiconductor optical element capable of improving light emissioncharacteristics can be manufactured.

Further, carbon has a diffusion coefficient smaller than that of thegroup 2 element. For this reason, even if the group 2 element-dopedsecond conductivity type semiconductor layer is formed after thecarbon-doped second conductivity type semiconductor layer is formed,diffusion of the group 2 element into the active layer through thecarbon-doped second conductivity type semiconductor layer due to heatgenerated in forming the group 2 element-doped second conductivity typesemiconductor layer is sufficiently suppressed. Further, in theabove-mentioned manufacturing method, the second conductivity typesemiconductor layer includes a carbon-doped second conductivity typesemiconductor layer and a group 2 element-doped second conductivity typesemiconductor layer. For this reason, the thickness of the carbon-dopedsecond conductivity type semiconductor layer can be suppressed ascompared with the case where the second conductivity type semiconductorlayer is composed of only the carbon-doped second conductivity typesemiconductor layer. Therefore, when carbon halide is used in formingthe carbon-doped second conductivity type semiconductor layer, theamount of carbon halide used can be reduced. Therefore, it issufficiently suppressed that surface roughness and the introduction ofdefects are caused by the etching action due to the carbon halide in theformed carbon-doped second conductivity type semiconductor layer. Thatis, the carbon-doped second conductivity type semiconductor layer can beformed on the active layer while maintaining high crystallinity.Therefore, according to the manufacturing method, a semiconductoroptical element capable of sufficiently suppressing deterioration oflight emission characteristics can be obtained.

In the above-mentioned manufacturing method of the semiconductor opticalelement, the second conductivity type contact layer formation step mayinclude a step of forming a carbon-doped second conductivity typecontact layer where carbon is doped as a dopant in a compoundsemiconductor as the second conductivity type contact layer on thesecond conductivity type semiconductor layer.

In this case, the dopant is carbon in the carbon-doped secondconductivity type contact layer, and the carbon has a diffusioncoefficient smaller than that of the group 2 element. Therefore, even ifthe dopant concentration is increased in the carbon-doped secondconductivity type contact layer, diffusion of the dopant into the activelayer can be sufficiently suppressed. Accordingly, the carbon can bedoped with a higher concentration than the group 2 element, and theresistance of the carbon-doped second conductivity type contact layercan be lowered.

In the above-mentioned semiconductor optical element manufacturingmethod, in the second conductivity type contact layer formation step,the second conductivity type contact layer may be formed so that aconcentration of the dopant in the second conductivity type contactlayer is higher than a concentration of the dopant in the carbon-dopedsecond conductivity type semiconductor layer.

In this case, the concentration of the dopant in the carbon-doped secondconductivity type semiconductor layer is lower than the concentration ofthe dopant in the second conductivity type contact layer, and the dopantis carbon. Therefore, compared with the case where the dopantconcentration in the second conductivity type contact layer is equal toor less than the dopant concentration in the carbon-doped secondconductivity type semiconductor layer, the crystallinity can be furtherimproved in the carbon-doped second conductivity type semiconductorlayer bringing a larger effect on the light emission characteristic thanthe second conductivity type contact layer bringing less influence onthe light emission characteristic. Further, the resistance of the secondconductivity type contact layer can be further lowered. Accordingly, asemiconductor optical element capable of further improving lightemission characteristics can be formed.

In the above-mentioned group 2 element-doped second conductivity typesemiconductor layer formation step, the group 2 element-doped secondconductivity type semiconductor layer may be formed so as to include agraded layer where a concentration of the dopant increases as a distancefrom the active layer increases.

In this case, it is possible to manufacture a semiconductor opticalelement capable of suppressing the diffusion of the dopant into theactive layer in the formation or use of the group 2 element-doped secondconductivity type semiconductor layer while reducing the resistancevalue of the group 2 element-doped second conductivity typesemiconductor layer, and further improving the light emissioncharacteristics.

In addition, in the present invention, the “first conductivity type” isa n-type or p-type, and the “second conductivity type” is a conductivitytype different from the first conductivity type. For example, when thefirst conductivity type is n-type, the second conductivity type isp-type.

According to the present invention, a semiconductor optical elementcapable of improving light emission characteristics, a semiconductoroptical element forming structure, and a method of manufacturing asemiconductor optical element using the same are provided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view schematically showing a semiconductoroptical element according to one or more embodiments of the presentinvention;

FIG. 2 is a partial cross-sectional view schematically showing asemiconductor optical element forming structure according to one or moreembodiments of the present invention;

FIG. 3 is a cross-sectional view schematically showing a laminatedstructure of the semiconductor optical element of Example 1;

FIG. 4 is an optical microscope photograph showing a surface of a p-typecontact layer of the semiconductor optical element of Example 1;

FIG. 5 is an optical microscope photograph showing a surface of a p-typecontact layer of the semiconductor optical element of ComparativeExample 1; and

FIG. 6 is a cross-sectional view schematically showing a laminatedstructure of the semiconductor optical element of Example 8.

DETAILED DESCRIPTION

[Semiconductor Optical Element]

Hereinafter, one or more embodiments of the semiconductor opticalelement of the present invention will be described in detail withreference to FIG. 1. FIG. 1 is a cross-sectional view schematicallyshowing a semiconductor optical element according to one or moreembodiments of the present invention.

As shown in FIG. 1, a semiconductor optical element 100 includes an-type semiconductor substrate 10 as a first conductivity typesemiconductor substrate, and a laminated body 20 provided on the n-typesemiconductor substrate 10. In the laminated body 20, a n-typesemiconductor layer 30 as a first conductivity type semiconductor layer,an active layer 40, a p-type semiconductor layer 50 as a secondconductivity type semiconductor layer, and a p-type contact layer 60 asa second conductivity type contact layer are laminated sequentially fromthe n-type semiconductor substrate 10 side. In addition, examples of thesemiconductor optical element 100 includes, for example, a semiconductorlaser element and a light-emitting diode. Further, in the semiconductoroptical element 100, an electrode (not shown) may be provided on each ofthe n-type semiconductor substrate 10 and the laminated body 20.

The p-type semiconductor layer 50 includes a carbon-doped p-type cladlayer 51 as a carbon-doped p-type semiconductor layer where carbon isdoped as a dopant in a compound semiconductor, and a group 2element-doped p-type clad layer 52 as a group 2 element-doped p-typesemiconductor layer where a group 2 element is doped as a dopant in acompound semiconductor. In one or more embodiments, the carbon-dopedp-type clad layer 51 is arranged at a position closer to the activelayer 40 than the group 2 element-doped p-type clad layer 52. That is,the carbon-doped p-type clad layer 51 is disposed between the activelayer 40 and the group 2 element-doped p-type clad layer 52, and thegroup 2 element-doped p-type clad layer 52 is disposed between thecarbon-doped p-type clad layer 51 and the p-type contact layer 60.

In this semiconductor optical element 100, the p-type semiconductorlayer 50 has a carbon-doped p-type clad layer 51 where carbon is dopedas a dopant in a compound semiconductor, and a group 2 element-dopedp-type clad layer 52 where a group 2 element is doped as a dopant in acompound semiconductor, and the carbon-doped p-type clad layer 51 isarranged at a position closer to the active layer 40 than the group 2element-doped p-type clad layer 52. Therefore, according to thesemiconductor optical element 100, as compared with the case where thep-type semiconductor layer 50 is composed of only the carbon-dopedp-type clad layer 51, the thickness of the carbon-doped p-type cladlayer 51 can be reduced while maintaining the required thickness of thep-type semiconductor layer 50, and crystallinity of the p-typesemiconductor layer 50 can be improved. Therefore, the semiconductoroptical element 100 can improve light emission characteristics. Further,according to the semiconductor optical element 100, since crystallinityof the p-type semiconductor layer 50 can be improved, long-termreliability of the semiconductor optical element 100 can also beimproved.

Hereinafter, the n-type semiconductor substrate 10 and the laminatedbody 20 are described in detail.

<N-Type Semiconductor Substrate>

The n-type semiconductor substrate 10 includes a compound semiconductorand a dopant.

Examples of the compound semiconductor include a group III-V compoundsemiconductor such as GaAs and InP, for example.

Examples of the dopant include elements such as Si, Ge, Sn, S, Se andTe. These can be used alone or in combination of two or more kindsthereof.

The thickness of the n-type semiconductor substrate 10 is notparticularly limited but is typically 250 to 450 μm.

<Laminated Body>

The laminated body 20 includes the n-type semiconductor layer 30, theactive layer 40, the p-type semiconductor layer 50, and the p-typecontact layer 60. The laminated body 20 includes a compoundsemiconductor. Examples of the compound semiconductor include GaAs,AlGaAs, InGaAs, InGaAlAs, InP, GaInP, AlInP, AlGaInP and InGaAsP, forexample.

(N-Type Semiconductor Layer)

The n-type semiconductor layer 30 has, for example, a n-type waveguidelayer and a n-type clad layer sequentially from the active layer 40side. Here, the waveguide layer is a layer in which light propagatestogether with the active layer 40, and the clad layer is a layer forconfining light so that it propagates in the active layer 40 and thewaveguide layer.

The thickness of the n-type semiconductor layer 30 is not particularlylimited but may be 2 to 4 μm.

The n-type semiconductor layer 30 includes a compound semiconductor anda dopant. The compound semiconductor may be the same as or differentfrom the compound semiconductor contained in the n-type semiconductorsubstrate 10. As the dopant, the same dopant as the dopant in the n-typesemiconductor substrate 10 can be used.

The n-type waveguide layer and the n-type clad layer can be composed ofa layer having a constant dopant concentration, a graded layer in whicha dopant concentration changes along a direction away from the n-typesemiconductor layer 30, or a laminate of these.

(Active Layer)

The active layer 40 is a layer having a band gap smaller than the bandgap of the n-type semiconductor layer 30 and the p-type semiconductorlayer 50, and emitting light by applying a voltage.

The active layer 40 is composed of a laminate including a quantum welllayer between two barrier layers, for example.

The quantum well layer includes a compound semiconductor. The compoundsemiconductor is appropriately selected according to the wavelength oflight emitted from the semiconductor optical element 100. Examples ofthe compound semiconductor include InGaAs, GaAs, InGaAlAs, AlGaInP andInGaAsP.

The two barrier layers on both sides of the quantum well layer arelayers including a compound semiconductor having a band gap larger thanthe band gap of the quantum well layer. The barrier layer may furtherinclude a dopant.

The barrier layer can be composed of a layer having a constant dopantconcentration, a graded layer in which a dopant concentration changes asa distance from the quantum well layer increases, or a laminate ofthese. Alternatively, the barrier layer can be composed of a layer inwhich a composition of elements in a compound semiconductor is constant,a graded layer in which a composition of elements in a compoundsemiconductor changes along a direction away from the quantum welllayer, or a laminate of these.

The thickness of the active layer 40 is not particularly limited but isusually 30 to 70 nm. Further, the active layer 40 may be a multiplequantum well structure in which a quantum well layer and a barrier layerare alternately laminated over a plurality of layers.

(P-Type Semiconductor Layer)

The p-type semiconductor layer 50 is a layer for confining lightgenerated in the active layer 40 together with the n-type semiconductorlayer 30, and has a p-type clad layer. The p-type semiconductor layer 50may further include a p-type waveguide layer between the p-type cladlayer and the active layer 40. The p-type semiconductor layer 50 has acarbon-doped p-type clad layer 51 and a group 2 element-doped p-typeclad layer 52 as the p-type clad layer sequentially from the activelayer 40 side.

The concentration of the dopant in the carbon-doped p-type clad layer 51is not particularly limited but the concentration of the dopant may be1×10¹⁷ to 5×10¹⁸ cm⁻³. In this case, the optical loss in thesemiconductor optical element 100 can be suppressed sufficiently, andthe crystallinity of the carbon-doped p-type clad layer 51 can bemaintained higher in comparison with the case where the concentration ofthe dopant is out of the above range. The concentration of the dopant inthe carbon-doped p-type clad layer 51 may be 1×10¹⁷ to 1×10¹⁸ cm⁻³.

The carbon-doped p-type clad layer 51 can be composed of a layer havinga constant dopant concentration, a graded layer in which a dopantconcentration increases as a distance from the active layer 40increases, or a laminate of these. The carbon-doped p-type clad layer 51may include the graded layer in which the dopant concentration increasesas a distance from the active layer 40 increases. In this case, theresistance value of the carbon-doped p-type clad layer 51 can be reducedwhile suppressing an increase in optical loss in the vicinity of theactive layer 40.

Examples of the group 2 element in the group 2 element-doped p-type cladlayer 52 include zinc, magnesium, and beryllium.

The concentration of the dopant in the group 2 element-doped p-type cladlayer 52 is not particularly limited but the concentration of the dopantmay be 1×10¹⁷ to 1.5×10¹⁹ cm⁻³. In this case, the reduction of theresistance value of the group 2 element-doped p-type clad layer 52 andthe suppression of dopant diffusion into the active layer 40 can beachieved in comparison with the case where the dopant concentration isout of the above range. The concentration of the dopant in the group 2element-doped p-type clad layer 52 may be 3×10¹⁷ to 1.1×10¹⁹ cm⁻³.

The group 2 element-doped p-type clad layer 52 can be composed of alayer having a constant dopant concentration, a graded layer in which adopant concentration increases as a distance from the active layer 40increases, or a laminate thereof. The group 2 element-doped p-type cladlayer 52 may include the graded layer in which the dopant concentrationincreases as the distance from the active layer 40 increases. In thiscase, the diffusion of the dopant into the active layer 40 in the use ofthe semiconductor optical element 100 can be suppressed while theresistance value of the group 2 element-doped p-type clad layer 52 isreduced, and the light emission characteristics can be further improved.

The group 2 element-doped p-type clad layer 52 may have a layer having adopant concentration of 5×10¹⁸ to 1.5×10¹⁹ cm⁻³. In this case, a betterlight emission characteristic can be obtained without causing anincrease in the resistance of the semiconductor optical element 100 andan increase in the threshold current, as compared with the case wherethe dopant concentration is out of the above range.

The maximum concentration of the dopant in the group 2 element-dopedp-type clad layer 52 may be larger than the maximum concentration of thedopant in the carbon-doped p-type clad layer 51 or may be equal to orless than the maximum concentration of the dopant in the carbon-dopedp-type clad layer 51, but may be larger than the maximum concentrationof the dopant in the carbon-doped p-type clad layer 51.

In this case, the resistance between the p-type contact layer 60 and anelectrode (not shown) contacting the p-type contact layer 60 can belowered while the crystallinity of the p-type semiconductor layer 50 arefurther improved, as compared with the case where the maximumconcentration of the dopant in the group 2 element-doped p-type cladlayer 52 is equal to or less than the maximum concentration of thedopant in the carbon-doped p-type clad layer 51. Therefore, thesemiconductor optical element 100 can further improve light emissioncharacteristics.

Here, the ratio of the maximum concentration of the dopant in the group2 element-doped p-type clad layer 52 to the maximum concentration of thedopant in the carbon-doped p-type clad layer 51 has only to be largerthan 1, but it may be 10 or more. In this case, the semiconductoroptical element 100 can further improve light emission characteristicsand long-term reliability.

However, the above-mentioned ratio may be 15 or less.

In the group 2 element-doped p-type clad layer 52, a current blockinglayer having an opening for injecting a current and blocking current maybe provided. In this case, the spread of the current can be suppressed,and as a result, the light emission mode is stabilized.

In the current blocking layer, the opening may be formed inside theouter peripheral edge of the current blocking layer when the activelayer 40 and the current blocking layer are viewed in the thicknessdirection of the active layer 40.

In this case, a current can be supplied to an inner part of the activelayer 40, and stable light emission can be performed in thesemiconductor optical element 100. Here, the number of openings may beone or plural. The opening may be formed in a stripe shape.

The current blocking layer includes a compound semiconductor and adopant. As the compound semiconductor and the dopant, a compoundsemiconductor and a dopant similar to those of the n-type semiconductorsubstrate 10 can be used.

The group 2 element-doped p-type clad layer 52 may further include afirst layer in contact with the current blocking layer and provided onthe active layer 40 side with respect to the current blocking layer. Inthe first layer, the concentration of the dopant (group 2 element) maybe 5×10¹⁷ cm⁻³ or less. In this case, compared with the case where theconcentration of the dopant (group 2 element) is out of the above range,occurrence of abnormal oscillation due to current spread can besuppressed more sufficiently in the semiconductor optical element 100.

The group 2 element-doped p-type clad layer 52 may further include asecond layer provided on a side opposite to the active layer 40 of thecurrent blocking layer. The second layer may have a thickness of 1 μm ormore. In this case, when the semiconductor optical element 100 ismounted on one surface of a plate-like submount, with the p-type contactlayer 60 directed toward one surface side of the submount and the lightemission end face of the semiconductor optical element 100 retractedfrom an end face orthogonal to the one face of the submount, thethickness from the one surface of the submount to the active layer 40can be sufficiently secured and the light emitted from the lightemitting end face of the semiconductor optical element 100 issufficiently suppressed from being interrupted by the submount. When thegroup 2 element-doped p-type clad layer 52 has a second layer inmounting the semiconductor optical element 100 on one surface of thesubmount by solder, an interval from the one surface of the submount tothe active layer 40 is increased. Therefore, it is possible tosufficiently prevent the solder from connecting and short-circuiting thep-type semiconductor layer 50 and the n-type semiconductor layer 30.

The thickness of the second layer has only to be 1 μm or more but may be1.2 μm or more. However, the thickness of the second layer may be 2.5 μmor less, and further 2 μm or less. In this case, the crystallinity ofthe second layer can be sufficiently improved in comparison with thecase where the thickness of the second layer is out of each of the aboveranges.

Further, the group 2 element-doped p-type clad layer 52 may furtherinclude a layer provided between the second layer and the currentblocking layer and contacting the current blocking layer. In this layer,in order to prevent current from flowing between the layer and thecurrent blocking layer, the concentration of the dopant (group 2element) may be lower than the dopant concentration of the currentblocking layer, and further half or less of the dopant concentration ofthe current blocking layer.

The ratio of the thickness of the group 2 element-doped p-type cladlayer 52 in the thickness of the p-type semiconductor layer 50 may begreater than 50% and less than 100% or may be 50% or less, but may begreater than 50% and less than 100%.

In this case, the crystallinity of the p-type semiconductor layer 50 canbe further improved in comparison with the case where the ratio of thethickness of the group 2 element-doped p-type clad layer 52 in thethickness of the p-type semiconductor layer 50 is 50% or less.Therefore, the semiconductor optical element 100 can further improvelight emission characteristics.

However, in a case where the ratio of the thickness of the group 2element-doped p-type clad layer 52 in the thickness of the p-typesemiconductor layer 50 is larger than 50%, the ratio may be 75% or less.

Here, the thickness of the carbon-doped p-type clad layer 51 may be 2 μmor less. In this case, the crystallinity of the carbon-doped p-type cladlayer 51 can be further improved in comparison with the case where thethickness of the carbon-doped p-type clad layer 51 exceeds 2 μm. Thethickness of the carbon-doped p-type clad layer 51 may be 1.2 μm orless. However, the thickness of the carbon-doped p-type clad layer 51may be 1 μm or more. In this case, compared with the case where thethickness of the carbon-doped p-type clad layer 51 is less than 1 μm,diffusion of the dopant of the group 2 element included in the group 2element-doped p-type clad layer 52 laminated on the carbon-doped p-typeclad layer 51 into the active layer 40 can be suppressed sufficiently.

The thickness of the p-type semiconductor layer 50 is not particularlylimited but may be 4 μm or less. In this case, the crystallinity of thep-type semiconductor layer 50 can be further improved compared with thecase in which the thickness of the p-type semiconductor layer 50 exceeds4 μm. However, the thickness of the p-type semiconductor layer 50 may be3 μm or more.

(P-Type Contact Layer)

The p-type contact layer 60 is a layer in contact with an electrode (notshown).

The p-type contact layer 60 includes a compound semiconductor and adopant. As the compound semiconductor, a compound semiconductor similarto that of the group 2 element-doped p-type clad layer 52 can be used.Carbon may be used as the dopant. That is, the p-type contact layer 60may be composed of a carbon-doped p-type contact layer in which carbonis doped as a dopant in a compound semiconductor. In this case, sincethe dopant is carbon in the p-type contact layer 60, the resistance ofthe p-type contact layer 60 can be reduced. In addition, since carbonhas a diffusion coefficient smaller than that of the group 2 element, itis possible to sufficiently suppress diffusion of the dopant into theactive layer 40 even if the dopant concentration is increased.

The dopant concentration is not particularly limited but from theviewpoint of sufficiently lowering contact resistance with theelectrode, it may be 1×10¹⁹ cm⁻³ or more.

The dopant concentration in the p-type contact layer 60 may be higherthan the dopant concentration in the carbon-doped p-type clad layer 51,or may be equal to or less than the dopant concentration in thecarbon-doped p-type clad layer 51, but it may be higher than the dopantconcentration in the carbon-doped p-type clad layer 51.

In this case, the dopant concentration in the carbon-doped p-type cladlayer 51 is lower than the dopant concentration in the p-type contactlayer 60. Therefore, compared with the case where the dopantconcentration in the p-type contact layer 60 is equal to or less thanthe dopant concentration in the carbon-doped p-type clad layer 51, thecrystallinity can be further improved in the carbon-doped p-type cladlayer 51 bringing a larger effect on the light emission characteristicsthan the p-type contact layer 60 bringing a smaller effect on the lightemission characteristics. In addition, the resistance in the p-typecontact layer 60 can be further lowered. Accordingly, the light emissioncharacteristics of the semiconductor optical element 100 can be furtherimproved.

(N-Type Buffer Layer)

The laminated body 20 may further include a n-type buffer layer (notshown) between the n-type semiconductor substrate 10 and the n-typesemiconductor layer 30.

The n-type buffer layer is provided to enhance crystallinity of then-type semiconductor layer 30, and includes a compound semiconductor anda dopant.

As the compound semiconductor, a compound semiconductor similar to thatof the compound semiconductor contained in the n-type semiconductorsubstrate 10 can be used. As the dopant as well, a dopant similar to thedopant contained in the n-type semiconductor substrate 10 can be used.

The dopant concentration in the n-type buffer layer may be smaller thanthe dopant concentration in the n-type semiconductor substrate 10 andsmaller than the dopant concentration in the layer in contact with then-type buffer layer of the n-type semiconductor layer 30. In this case,crystallinity of the n-type semiconductor layer 30 is further enhanced.

The thickness of the n-type buffer layer is not particularly limited aslong as it is smaller than the thickness of the n-type semiconductorsubstrate 10, but is usually 300 to 1,000 nm.

<Use of Semiconductor Optical Element>

Since the semiconductor optical element 100 can improve light emissioncharacteristics as described above, it is useful as a light source foruse in a fiber laser or a medical laser (for example, a dental laser).

[Semiconductor Optical Element Forming Structure]

Next, a semiconductor optical element forming structure for forming theabove-mentioned semiconductor optical element 100 will be described indetail with reference to FIG. 2. FIG. 2 is a partial cross-sectionalview schematically showing a semiconductor optical element formingstructure according to one or more embodiments of the present invention.In FIG. 2, the same or equivalent components as those of FIG. 1 aredenoted by the same reference numerals, and redundant explanations areomitted.

As shown in FIG. 2, a structure 200 for forming a semiconductor opticalelement includes a n-type semiconductor wafer 210 as a firstconductivity type semiconductor wafer and a laminated body 220 providedon the n-type semiconductor wafer 210.

The n-type semiconductor wafer 210 is composed of a material similar tothat of the n-type semiconductor substrate 10.

In the laminated body 220, a n-type semiconductor layer 30, an activelayer 40, a p-type semiconductor layer 50, and a p-type contact layer 60are sequentially laminated from the n-type semiconductor wafer 210 side.

In the structure 200 for forming a semiconductor optical element, thep-type semiconductor layer 30 includes a carbon-doped p-type clad layer51 where carbon is doped as a dopant in a compound semiconductor, and agroup 2 element-doped p-type clad layer 52 where a group 2 element isdoped as a dopant in a compound semiconductor. Therefore, according tothe semiconductor optical element forming structure 200, as comparedwith the case where the p-type semiconductor layer 30 is composed ofonly the carbon-doped p-type clad layer, the thickness of thecarbon-doped p-type clad layer 51 can be reduced while maintaining therequired thickness of the p-type semiconductor layer 30, andcrystallinity of the p-type semiconductor layer 30 can be improved.Therefore, according to the structure 200 for forming a semiconductoroptical element, the semiconductor optical element 100 capable ofimproving light emission characteristics can be formed.

In order to obtain the semiconductor optical element 100 from thestructure 200 for forming a semiconductor optical element, for example,the semiconductor optical element forming structure 200 may be stuck toan adhesive sheet or the like, and the semiconductor optical elementforming structure 200 may be scratched and cleaved.

[Manufacturing Method of Semiconductor Optical Element]

Next, a manufacturing method of the above-mentioned semiconductoroptical element 100 will be described with reference to FIG. 2. FIG. 2is a partial cross-sectional view schematically showing a semiconductoroptical element forming structure according to one or more embodimentsof the present invention.

First, as shown in FIG. 2, a structure 200 for forming a semiconductoroptical element is prepared (Structure Preparation Step).

For this purpose, a n-type semiconductor wafer 210 is prepared first. Asthe n-type semiconductor wafer 210, a n-type semiconductor wafercomposed of the same material as the n-type semiconductor substrate 10is prepared.

Next, after the n-type semiconductor layer 30 and the active layer 40are formed on one surface of the n-type semiconductor wafer 210, thep-type semiconductor layer 50 is formed (Second Conductivity typeSemiconductor Layer Formation Step).

At this time, the p-type semiconductor layer 50 is formed by forming acarbon-doped p-type clad layer 51 on the active layer 40 (carbon-dopedsecond conductivity type semiconductor layer formation step), and thenforming a group 2 element-doped p-type clad layer 52 on the carbon-dopedp-type clad layer 51 (group 2 element-doped second conductivity typesemiconductor layer formation step).

Next, a p-type contact layer 60 is formed on the p-type semiconductorlayer 50 (carbon-doped second conductivity type contact layer formationstep).

Thus, the laminated body 220 is obtained.

At this time, the n-type semiconductor layer 30, the active layer 40,the p-type semiconductor layer 50, and the p-type contact layer 60 canbe formed, for example, by a metal organic chemical vapor deposition(MOCVD: Metal Organic Chemical Vapor Deposition) method. At this time,as a raw material, a necessary raw material selected from trimethylgallium (TMG), trimethylaluminum (TMA), trimethyl indium (TMI), arsinegas (AsH₃), halomethane such as carbon bromide (CBr₄) or carbon chloride(CCl₄), diethyl zinc (DEZ), monosilane (SiH₄), and the like may be usedaccording to a material constituting each of the layers.

Thus, the semiconductor optical element forming structure 200 isobtained.

Next, after an electrode is formed on each of the n-type semiconductorwafer 210 of the semiconductor optical element forming structure 200 andthe p-type contact layer 60 of the laminated body 220 if necessary, thesemiconductor optical element forming structure 200 is stuck to anadhesive sheet or the like. Then, the semiconductor optical elementforming structure 200 is scratched and cleaved, and separated into aplurality of semiconductor optical elements 100 to obtain asemiconductor optical element 100 (semiconductor optical elementformation step).

Thus, the semiconductor optical element 100 is obtained.

When the semiconductor optical element 100 is manufactured as describedabove, in the obtained semiconductor element 100, the p-typesemiconductor layer 50 includes a carbon-doped p-type clad layer 51 inwhich carbon is doped as a dopant in a compound semiconductor; and agroup 2 element-doped p-type clad layer 52 which is provided between thep-type contact layer 60 and the carbon-doped p-type clad layer 51 and inwhich a group 2 element is doped as a dopant in a compoundsemiconductor. Therefore, according to the semiconductor optical elementforming structure 200, compared with the case where the p-typesemiconductor layer 50 is composed of only the carbon-doped p-type cladlayer 51 where carbon is doped as a dopant in a compound semiconductor,the thickness of the carbon-doped p-type clad layer 51 can be reducedwhile maintaining the required thickness of the p-type semiconductorlayer 50, and crystallinity of the p-type semiconductor layer 50 can beimproved. Therefore, according to the above-mentioned manufacturingmethod, a semiconductor optical element 100 capable of improving lightemission characteristics can be obtained. Further, according to theabove-mentioned manufacturing method, since the crystallinity of thep-type semiconductor layer 50 can be improved in the obtainedsemiconductor optical element 100, the long-term reliability of thesemiconductor optical element 100 can also be improved.

Further, in the above-mentioned manufacturing method, since the p-typesemiconductor layer 50 includes a carbon-doped p-type clad layer 51 anda group 2 element-doped p-type semiconductor layer 52, the thickness ofthe carbon-doped p-type semiconductor layer 51 can be suppressed ascompared with the case where the p-type semiconductor layer 50 iscomposed of only the carbon-doped p-type clad layer 51. Therefore, whenhalomethane such as carbon bromide (CBr₄) or carbon chloride (CCl₄) isused in forming the carbon-doped p-type clad layer 51, the amount ofhalomethane used can be reduced. Therefore, it is sufficientlysuppressed that surface roughness and the introduction of defects in theformed carbon-doped p-type clad layer 51 is caused by the etching actiondue to the halomethane. That is, the carbon-doped p-type clad layer 51can be formed on the active layer 40 while maintaining highcrystallinity. Therefore, according to the above-mentioned manufacturingmethod, a semiconductor optical element 100 capable of sufficientlysuppressing deterioration of light emission characteristics can beobtained.

In addition, in the case where the group 2 element-doped p-type cladlayer 52 is formed on the carbon-doped p-type clad layer 51, the group 2element-doped p-type clad layer 52 may be formed so as to include agraded layer where a dopant concentration increases as a distance fromthe active layer 40 increases.

In this case, while reducing the resistance value of the group 2element-doped p-type clad layer 52, a semiconductor optical element 100capable of suppressing diffusion of a dopant into the active layer 40 atthe time of formation (annealing) of the group 2 element-doped p-typeclad layer 52 and in use and further improving light emissioncharacteristics can be manufactured.

The present invention is not limited to the above embodiments. Forexample, in the above-mentioned embodiments, the semiconductor opticalelement 100 has a n-type semiconductor layer 30, and the n-typesemiconductor layer 30 has a n-type waveguide layer. However, the n-typesemiconductor layer 30 may not have the n-type waveguide layer.

Further, in the above-mentioned embodiments, the current blocking layeris provided in the group 2 element-doped p-type clad layer 52, but thecurrent blocking layer may be provided in the carbon-doped p-type cladlayer 51.

Furthermore, in the above-mentioned embodiments, a current blockinglayer is provided in the group 2 element-doped p-type clad layer 52, anda current stripe structure can be formed from the current blockinglayer. However, instead of the current stripe structure, a ridgestructure having a current injection region and a current non-injectionregion may be provided. In this case, a portion other than the currentinjection region becomes the current non-injection region. Here, thedepth of the current non-injection region is not particularly limitedand may be any depth. For example, in FIG. 6 according to Example 8, aportion from the carbon-doped p-type contact layer to the zinc-dopedp-type clad layer is removed by etching, but the depth of the removedpart by the etching may be a depth from the carbon-doped p-type contactlayer to the middle of the zinc-doped p-type clad layer, or may be adepth from the carbon-doped p-type contact layer to the carbon-dopedp-type clad layer.

EXAMPLES

Hereinafter, the contents of the present invention will be describedmore specifically by way of Examples, but the present invention is notlimited to the following Examples.

Example 1

First, a n-type semiconductor wafer having a thickness of 350 μm and adiameter of 50 mm was prepared. At this time, as the n-typesemiconductor wafer, a wafer where Si was doped in GaAs as a dopant in aconcentration of 1.0×10¹⁸ cm⁻³ was used.

Next, a n-type buffer layer, a n-type semiconductor layer, an activelayer, a p-type semiconductor layer, and a p-type contact layer weresequentially formed on one surface of the n-type semiconductor wafer toobtain a laminated body.

At this time, the n-type buffer layer was composed of a layer obtainedby doping Si as a dopant in a concentration of 3×10¹⁷ cm⁻³ in GaAs andwas formed to have a thickness of 500 nm. The n-type semiconductor layerwas composed of a layer obtained by doping Si as a dopant in AlGaAs, andthe n-type semiconductor layer was composed of a n-type clad layer and an-type waveguide layer sequentially from the n-type semiconductor waferside. The n-type clad layer is a layer in which a dopant concentrationis reduced from 1.0×10¹⁸ cm⁻³ to 1.0×10¹⁷ cm⁻³ as a distance from then-type semiconductor wafer increased, and the layer was formed so that alayer having a constant dopant concentration and a plurality of layerswhere dopant concentrations continuously change from those of adjacentlayers had a total thickness of 3500 nm. The n-type waveguide layer wasa layer in which a Si dopant concentration was increased from 5.0×10¹⁶cm⁻³ to 5.0×10¹⁷ cm⁻³ as a distance from the n-type semiconductor waferincreased, and the layer was formed so that a layer having a constantdopant concentration and a plurality of layers where dopantconcentrations continuously change from those of adjacent layers had atotal thickness of 550 nm.

The active layer was composed of a first barrier layer, a quantum welllayer, and a second barrier layer sequentially from the n-typesemiconductor wafer side. At this time, a layer obtained by doping Si inAlGaAs was formed as the first barrier layer. The quantum well layer wasformed so that a layer composed of an InGaAs layer has an In compositionand a thickness with which a laser oscillation wavelength of 915 nm canbe obtained. A layer made of AlGaAs was formed as the second barrierlayer.

The p-type semiconductor layer was composed of a carbon-doped p-typeclad layer and a zinc-doped p-type clad layer, and the zinc-doped p-typeclad layer was formed to include a zinc-doped p-type first clad layerand a zinc-doped p-type second clad layer. The carbon-doped p-type cladlayer was a layer in which an A1 composition of AlGaAs was 50 mol % anda carbon dopant concentration was increased from 1.0×10¹⁷ cm⁻³ to1.0×10¹⁸ cm⁻³ as a distance from the active layer increased, and thelayer was formed so that a layer having a constant dopant concentrationand a plurality of layers where dopant concentrations continuouslychanged from those of adjacent layers had a total thickness of 1050 nm.The zinc-doped p-type first clad layer was formed so that a layerobtained by doping zinc in a concentration of 3.0×10¹⁷ cm⁻³ in GaAs hada thickness of 400 nm. Further, in the zinc-doped p-type clad layer, an-type current blocking layer was formed by etching an opening having awidth of 150 μm for injecting a current in a stripe shape using a mixedacid of sulfuric acid and hydrogen peroxide solution after forming aprecursor layer of the n-type current blocking layer having a thicknessof 450 nm made of GaAs doped with Si as a dopant by an organic metalvapor phase growth method (MOCVD method) so as to cover the entiresurface of the zinc-doped p-type first clad layer. At this time, the Siconcentration in the n-type current blocking layer was set to 2×10¹⁸cm⁻³. The zinc-doped p-type second clad layer was formed after formingan opening in the precursor layer of the n-type current blocking layerin a stripe shape. The zinc-doped p-type second clad layer was made ofGaAs and was formed with a total thickness of 1750 nm to have aplurality of layers laminated so that a zinc dopant concentrationincreased from 1.0×10¹⁸ cm⁻³ to 1.1×10¹⁹ cm⁻³ as a distance from theactive layer increased. In each layer constituting the plurality oflayers, the zinc dopant concentration was constant. Further, theplurality of layers were formed so as to include a layer having a zincdopant concentration of 1.1×10¹⁹ cm⁻³ and a thickness of 350 nm as alayer having a maximum zinc dopant concentration and separatingfurthermost from the active layer.

The p-type contact layer was a carbon-doped p-type contact layerobtained by doping carbon as a dopant in GaAs, and was formed with athickness of 300 nm so that a carbon dopant concentration was 3.0×10¹⁹cm⁻³. After the p-type contact layer was formed, annealing treatment wasperformed.

The n-type buffer layer, the n-type semiconductor layer, the activelayer, the p-type semiconductor layer, and the p-type contact layer wereformed by a MOCVD method. At this time, as a raw material, a requiredraw material selected from trimethyl gallium (TMG), trimethylaluminum(TMA), trimethyl indium (TMI), arsine gas, halomethane such as carbonbromide (CBr₄) or carbon chloride (CCl₄), diethyl zinc (DEZ), monosilane(SiH₄) and the like might be used according to a material constitutingeach layer. Thus, a semiconductor optical element forming structure wasobtained.

Finally, after the semiconductor optical element forming structureobtained as described above was stuck to an adhesive sheet, thesemiconductor optical element forming structure was scratched andcleaved, and the semiconductor optical element having a width of 500 μmand a resonator length of 4 mm was separated so that an opening formedin a stripe shape was located at the center.

Thus, a semiconductor optical element was obtained. A laminatedstructure of the semiconductor optical element of Example 1 is shown inFIG. 3.

Comparative Example 1

A semiconductor optical element was manufactured in the same manner asin Example 1 except that a carbon-doped p-type clad layer was formed inplace of the zinc-doped p-type clad layer. Specifically, thesemiconductor optical element was manufactured in the same manner as inExample 1 except that the carbon-doped p-type clad layer was formed inplace of the zinc-doped p-type clad layer by changing the dopant fromzinc to carbon.

Regarding the semiconductor optical elements of Example 1 andComparative Example 1 obtained as described above, the surface of thep-type contact layer side was observed by an optical microscope at amagnification of 50 times as an interference image through a Nomarskiinterference filter. The optical microscope photographs of Example 1 andComparative Example 1 are shown in FIGS. 4 and 5, respectively.

As shown in FIG. 4, in the semiconductor optical element of Example 1,irregularities such as pits were not observed on the surface of thep-type contact layer. From this, it is considered that there were noirregularities on the surface of the p-type semiconductor layer as well.On the other hand, as shown in FIG. 5, in the semiconductor opticalelement of Comparative Example 1, cloudiness was seen since there weremany irregularities such as pits on the surface of the p-type contactlayer.

Therefore, in the semiconductor optical element of Comparative Example1, roughness was observed on the surface of the p-type semiconductorlayer. In contrast, in the semiconductor optical element of Example 1,no roughness was observed on the surface of the p-type semiconductorlayer. That is, there was no surface roughness. Therefore, thesemiconductor optical element of Example 1 is considered to improve thecrystallinity of the p-type semiconductor layer.

Examples 2 to 7

Semiconductor optical elements were manufactured in the same manner asin Example 1 except that the zinc dopant concentration in the layerhaving the maximum zinc dopant concentration and separating furthermostfrom the active layer of the zinc-doped p-type second clad layer was setto 2.0×10¹⁸ cm⁻³, 5.0×10¹⁸ cm⁻³, 8.0×10¹⁸ cm⁻³, 1.5×10¹⁹ cm⁻³, 2.0×10¹⁹cm⁻³ or 3.0×10¹⁹ cm⁻³, respectively as shown in Table 1.

In the semiconductor optical elements of Examples 2 to 7 as well, thesurfaces of the p-type contact layer side were observed in the samemanner as in the semiconductor optical element of Example 1. The resultsare shown in Table 1. As a result, all of the semiconductor opticalelements of Examples 2 to 7 exhibited the same results as those ofExample 1 in terms of surface roughness. Further, regarding thesemiconductor optical elements of Examples 2 to 7, an electrode wasformed by a metal vapor deposition film on the outermost surface of then-type semiconductor layer and the p-type semiconductor layer to injecta current into the semiconductor optical element. Next, a n-sideelectrical junction and a p-side electrical junction for bonding to then-type semiconductor layer and the p-type semiconductor layer wereformed on a submount for radiating heat generated in accompany withlaser oscillation of the semiconductor optical element, respectively.Thereafter, the semiconductor optical element was mounted on thesubmount by using solder and a wire. At this time, the n-typesemiconductor layer was bonded to the n-side electrical junction, andthe p-type semiconductor layer was bonded to the p-side electricaljunction. A current was injected from a power source to thesemiconductor optical element mounted on the submount through theelectrical junction, and a resistance value and a threshold current weremeasured. The results are shown in Table 1. However, in Table 1, theresistance values and the threshold current values of the semiconductoroptical elements of Examples 2 to 7 were shown by relative values withthe resistance value and the threshold current value of thesemiconductor optical element of Example 1 being 100. As shown in Table1, a semiconductor optical element having a resistance value of lessthan +10% or a threshold current value of less than +6% to theresistance value or the threshold current value of Example 1 wasexpressed as “A”, and a semiconductor optical element having aresistance value of +10% or more or a threshold current value of +6% ormore was expressed as “B”. In addition, since the resistance value andthe threshold current value of Example 1 were expressed as “−” sincethey were the references of the resistance values and the thresholdcurrent values of Examples 2 to 7.

As shown in Table 1, the semiconductor optical elements of Examples 3 to5 showed results in which resistance values or threshold current valuesfurther improved as compared with the semiconductor optical elements ofExamples 2, 6, and 7. From the results, it was found that a zinc dopantconcentration may be 5.0×10¹⁸ cm⁻³ to 1.5×10¹⁹ cm⁻³ in the layer havinga maximum dopant concentration and separating furthermost from theactive layer of the zinc-doped p-type second clad layer.

TABLE 1 Example 1 Example 2 Example 3 Example 4 Example 5 Example 6Example 7 Zn dopant 1.1 × 10¹⁹ 2.0 × 10¹⁸ 5.0 × 10¹⁸ 8.0 × 10¹⁸ 1.5 ×10¹⁹ 2.0 × 10¹⁹ 3.0 × 10¹⁹ concentration (cm⁻³) Surface roughness nonenone none none none none none Threshold current value 100 101 100 100102 107 137 (Example 1 = 100) Resistance value 100 121 103  79  93  90 72 (Example 1 = 100) Evaluation — B A A A B B

Example 8

A semiconductor optical element having the same structure as that of thesemiconductor optical element of Example 1 was manufactured except thata current injection stripe formed by the n-type current blocking layermade of Si-doped GaAs in Example 1 was changed to a ridge structurehaving a current non-injection region formed of an insulating film asfollows (see FIG. 6). Specifically, after the same laminated structureas that of Example 1 except for the n-type current blocking layer wasgrown by the MOCVD method, a p-type contact layer and a zinc-dopedp-type first clad layer were removed by a mixed acid composed oftartaric acid and hydrogen peroxide solution to form a convex portion(mesa) having a width of 150 μm corresponding to the current injectionregion. The widths of the removed portions due to etching on both sidesof the convex portion were set to be 40 μm. Thereafter, an insulatingfilm made of SiNx was grown on a portion other than the currentinjection region to form a current non-injection region. A semiconductoroptical element having a ridge structure having a current non-injectionregion was manufactured as described above. With respect to thesemiconductor optical element, surface observation on the p-type contactlayer side was performed in the same manner as in Example 1. As aresult, the same results as those of Example 1 were obtained.

Accordingly, it has been found that the present invention was effectivein a semiconductor optical element of not only a current stripestructure formed from a current blocking layer but also a ridgestructure having a current non-injection region.

Example 9

A semiconductor optical element was manufactured in the same manner asin Example 1 except that the quantum well layer in the active layer wasformed of GaAs instead of InGaAs. With respect to the semiconductoroptical element, surface observation on the p-type contact layer sidewas performed in the same manner as in Example 1. As a result, the sameresults as those of Example 1 were obtained.

Accordingly, it has been found that the present invention is effectivenot only in a semiconductor optical element in which the material of thequantum well is InGaAs but also GaAs.

Thus, it is considered that the semiconductor optical element of thepresent invention can improve light emission characteristics.

Although the disclosure has been described with respect to only alimited number of embodiments, those skilled in the art, having benefitof this disclosure, will appreciate that various other embodiments maybe devised without departing from the scope of the present invention.Accordingly, the scope of the invention should be limited only by theattached claims.

REFERENCE SIGNS LIST

-   10 N-type semiconductor substrate (first conductivity type    semiconductor substrate)-   20 Laminated body-   30 N-type semiconductor layer (first conductivity type semiconductor    layer)-   40 Active layer-   50 P-type semiconductor layer (second conductivity type    semiconductor layer)-   51 Carbon-doped p-type clad layer (carbon-doped second conductivity    type semiconductor layer)-   52 Group 2 element-doped p-type clad layer (group 2 element-doped    second conductivity type semiconductor layer)-   60 P-type contact layer (second conductivity type contact layer)-   100 Semiconductor optical element-   200 Semiconductor optical element forming structure-   210 N-type semiconductor wafer (first conductivity type    semiconductor wafer)-   220 Laminated body

The invention claimed is:
 1. A semiconductor optical element,comprising: a first conductivity type semiconductor substrate; and alaminated body disposed on the first conductivity type semiconductorsubstrate, wherein the laminated body comprises, in the following orderfrom a side of the first conductivity type semiconductor substrate: afirst conductivity type semiconductor layer; an active layer; a secondconductivity type semiconductor layer; and a second conductivity typecontact layer, wherein the second conductivity type semiconductor layercomprises: a carbon-doped semiconductor layer in which carbon is dopedas a dopant in a compound semiconductor; a first group 2 element-dopedsemiconductor layer in which a group 2 element is doped as a dopant in acompound semiconductor; a current blocking layer; and a second group 2element-doped semiconductor layer, wherein the current blocking layer isdisposed between the first group 2 element-doped semiconductor layer andthe second group 2 element-doped semiconductor layer, and thecarbon-doped semiconductor layer is disposed at a position closer to theactive layer than the first group 2 element-doped semiconductor layer.2. The semiconductor optical element according to claim 1, wherein thesecond conductivity type contact layer comprises a carbon-doped contactlayer in which carbon is doped as a dopant in a compound semiconductor.3. The semiconductor optical element according to claim 2, aconcentration of the dopant in the second conductivity type contactlayer is higher than a concentration of the dopant in the carbon-dopedsemiconductor layer.
 4. The semiconductor optical element according toclaim 1, wherein a ratio of a thickness of the first group 2element-doped semiconductor layer to a thickness of the secondconductivity type semiconductor layer is greater than 50% and less than100%.
 5. The semiconductor optical element according to claim 1, whereina maximum concentration of the dopant in the first group 2 element-dopedsemiconductor layer is larger than a maximum concentration of the dopantin the carbon-doped semiconductor layer.
 6. The semiconductor opticalelement according to claim 1, wherein the first group 2 element-dopedsemiconductor layer comprises a graded layer where a concentration ofthe dopant increases as a distance from the active layer increases.
 7. Asemiconductor optical element forming structure, comprising: a firstconductivity type semiconductor wafer; and a laminated body on the firstconductivity type semiconductor wafer, wherein the laminated bodyincluding comprises, in the following order from a side of the firstconductivity type semiconductor wafer: a first conductivity typesemiconductor layer; an active layer; a second conductivity typesemiconductor layer; and a second conductivity type contact layer,wherein the second conductivity type semiconductor layer comprises: acarbon-doped semiconductor layer in which carbon is doped as a dopant ina compound semiconductor; a first group 2 element-doped semiconductorlayer in which a group 2 element is doped as a dopant in a compoundsemiconductor; a current blocking layer; and a second group 2element-doped semiconductor layer, wherein the current blocking layer isdisposed between the first group 2 element-doped semiconductor layer andthe second group 2 element-doped semiconductor layer, and thecarbon-doped semiconductor layer is disposed at a position closer to theactive layer than the first group 2 element-doped semiconductor layer.8. The semiconductor optical element forming structure according toclaim 7, wherein the second conductivity type contact layer comprises acarbon-doped contact layer in which carbon is doped as a dopant in acompound semiconductor.
 9. The semiconductor optical element formingstructure according to claim 8, wherein a concentration of the dopant inthe second conductivity type contact layer is higher than aconcentration of the dopant in the carbon-doped semiconductor layer. 10.The semiconductor optical element forming structure according to claim7, wherein a ratio of a thickness of the first group 2 element-dopedsecond conductivity type semiconductor layer to a thickness of thesecond conductivity type semiconductor layer is greater than 50% andless than 100%.
 11. The semiconductor optical element forming structureaccording to claim 7, wherein a maximum concentration of the dopant inthe first group 2 element-doped semiconductor layer is larger than amaximum concentration of the dopant in the carbon-doped semiconductorlayer.
 12. The semiconductor optical element forming structure accordingto claim 7, wherein the first group 2 element-doped semiconductor layercomprises a graded layer where a concentration of the dopant increasesas a distance from the active layer increases.
 13. A method ofmanufacturing a semiconductor optical element, the method comprising:preparing a semiconductor optical element forming structure according toclaim 7; and forming the semiconductor optical element from thesemiconductor optical element forming structure, wherein the preparingof the semiconductor optical element forming structure comprises:forming the second conductivity type semiconductor layer on the activelayer; and forming the second conductivity type contact layer on thesecond conductivity type semiconductor layer, and the forming of thesecond conductivity type semiconductor layer on the active layercomprises: forming the carbon-doped semiconductor layer on the activelayer; and forming the second conductivity type semiconductor layer byforming the first group 2 element-doped semiconductor layer on thecarbon-doped semiconductor layer.
 14. The method according to claim 13,wherein the forming of the second conductivity type contact layercomprises forming a carbon-doped contact layer in which carbon is dopedas a dopant in a compound semiconductor as the second conductivity typecontact layer on the second conductivity type semiconductor layer. 15.The method according to claim 14, wherein, in the forming of the secondconductivity type contact layer, the second conductivity type contactlayer is formed such that a concentration of the dopant in the secondconductivity type contact layer is higher than a concentration of thedopant in the carbon-doped semiconductor layer.
 16. The method accordingto claim 13, wherein, in the forming of the first group 2 element-dopedsemiconductor layer, the first group 2 element-doped semiconductor layeris formed so as to include such that the first group 2 element-dopedsemiconductor layer comprises a graded layer in which a concentration ofthe dopant increases as a distance from the active layer increases.